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Statistical Variability is the Bulk CMOS Killer

Statistical variability due to high channel doping concentration has killed bulk CMOS. It restricts the supply voltage and SRAM area scaling and dramatically increases leakage and standby power. According to an article that will be published in IEEE ...

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May 28, 2014  |   Share:

Metal-gate-first FD-SOI will be very good but metal-gate-last could be spectacular

We have investigated the expected statistical variability in 32/28nm FD-SOI transistors in comparison to equivalent bulk MOSFETs, particularly looking at the benefits of metal-gate-last technology.

Categories: None | Tags: Statistical Variability, Fd Soi, Metal Gate First, Metal Gate Last

December 4, 2012  |   Share:

At 20nm metal-gate-last could buy you 100mV reduction of the SRAM Vcmin compared to metal-gate-first

We present an analysis of the statistical variability in 20nm bulk CMOS with a comparison of gate-first and gate-last technologies.

Categories: None | Tags: Bulk, Cmos, Sram, Gate First, Gate Last, Metal Gate Granularity, Statistical Variability

October 10, 2012  |   Share:

FD SOI FinFETS can offer better performance than bulk FinFETs

Assuming that you can make ideal rectangular bulk and SOI FinFETs, which one will have better performance?

Categories: None | Tags: Finfet, Soi, Bulk

July 27, 2012  |   Share:

Process-induced variability in the Intel FinFETs

We continue our analysis of the Intel 22nm FinFET device by looking at process variability.

Categories: None | Tags: Intel, Finfet, Tri Gate, Chipworks, Garand

June 6, 2012  |   Share:

Simulation analysis of the Intel 22nm FinFET

We use the GSS TCAD simulator GARAND to do an initial analysis of the Intel 22nm FinFET device.

Categories: None | Tags: Garand, Intel, Finfet, Tri Gate, Chipworks

May 9, 2012  |   Share: