IEDM Paper: SOI FinFets posied to meet variability requirements of 11nm CMOS.
Statistical CMOS variability is the cover story in the August special issue of the IEEE Transactions on Electron Devices. The special issue features four papers featuring results obtained from simulations using GARAND.
Gold Standard Simulations (GSS) is the leader in the simulation of statistical variability in nano-CMOS devices. The services we offer include the physical simulation of statistical variability, statistical compact model extraction and statistical circuit simulation using ‘push button’ cluster-based technology.
Statistical variability of transistor characteristics, introduced by the discreteness of charge and matter, has become a major concern for CMOS scaling and integration, and demands fundamental changes in circuit and system design.
In addition to statistical variability, statistical aspects of reliability could reduce the life-span of contemporary CMOS circuits and systems from tens of years to 1-2 years, or less, in the near future.
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